By Richard C. Alkire, Dieter M. Kolb
Quantity 7 within the well-established sequence "Advances in Electrochemical technological know-how and Engineering" covers - between others - vital issues on electrodeposition. As in all past volumes, the editors have succeeded in identifying hugely topical components of electrochemical learn and in providing authors who're leaders of their fields. the result's a compelling set of studies which serves both good as a good and up to date resource of knowledge for skilled researchers lively within the box in addition to an advent for beginners. From studies of the former volumes: 'This is a vital ebook for researchers in electrochemistry; it covers components of either primary and useful value, with stories of top of the range. the fabric is especially good provided and the alternative of issues displays a balanced editorial coverage that's welcomed.' The Analyst 'All the contributions during this quantity are good as much as the traditional of this glorious sequence and may be of significant price to electrochemists... The editors back should be congratulated in this fantastic selection of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry '...competently and obviously written.' Berichte der Bunsen- Gesellschaft fur Physikalische Chemie
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Extra info for Advances in Electrochemical Science and Engineering
281]. 44 John L. Stickney Electrochemical Atomic Layer Epitaxy: Nanoscale Control in the Electrodeposition 45 ilarities in appearance are expected. Visual inspection of the 1 cm Â 3 cm CdSe deposits shows them to be more homogeneous then corresponding CdTe deposits. , formed superlattices with CdSe and CdS, using EC-ALE, without an automated system . They studied their relatively thin deposits by surface enhanced Raman (SERS), examining stress build-up in the deposits. 3 CdS CdS growth, by EC-ALE, has been studied by more groups than any other compound (Table 1) [111, 123, 143, 145, 154, 163, 165, 167±169, 172, 186].
In addition, Villegas was the ®rst to notice the need to adjust potentials as the deposits grow. 2 CdSe Films of CdSe have been grown with the automated ¯ow-cell systems, both using the H-cell  (Figure 3B), and recently with the large thin-layer cell (Figure 3C) . Comparisons of X-ray di¨raction patterns (XRD) have suggested that in both cases, 42 John L. Stickney Fig. 21. XRD of CdSe formed using the large thin layer ¯ow cell, and 200 cycles. Adapted from ref. . the quality of the CdSe deposits were better than equivalent CdTe ®lms, formed under similar conditions (Figure 16B).
Their work involved the growth of ®lms of increasing thickness, with an increasing numbers of EC-ALE cycles, and clearly showed the dependence of the bandgap on the thickness of the ZnS ®lms. 5 nm, showed the expected dependence on thickness. 6 eV, to about 4 eV. However, deposit formed with less than 4 cycles did not display the theoretical exponential dependence expected. 3. 7 InAs InAs was the ®rst III±V compound grown using EC-ALE [Wade, 1999 656; Wade, 2000 2431], although there was some early work concerned with the formation of GaAs [146, 173].
Advances in Electrochemical Science and Engineering by Richard C. Alkire, Dieter M. Kolb